TRF1223 |
RFQ for TRF1223 |
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| Technical/Catalog Information | TRF1223IRTMR |
| Vendor | Texas Instruments (VA) |
| Category | RF and RFID |
| Package / Case | 32-VQFN |
| Voltage - Supply | ±4.75 V ~ 5.25 V |
| Current - Supply | 925mA |
| Gain | 30dB |
| Frequency | 3.3GHz ~ 3.8GHz |
| RF Type | MMDS, MDS, WCS |
| Packaging | Digi-Reel? |
| Noise Figure | 6dB ~ 7db |
| P1db | 31dBm |
| Test Frequency | 3.3GHz ~ 3.8GHz |
| Drawing Number | 296; 4206039; RTM; 32 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TRF1223IRTMR TRF1223IRTMR 296 18254 6 ND 296182546ND 296-18254-6 |
| Product | Manufacturers | Pack | D/C |
| TRF1223 | - | - | - |
The TRF1223 is a highly integrated linear transmitter / power amplifier (PA) MMIC. The chip has two 16-dB gain steps that provide a total of 32-dB gain control via 1-bit TTL control signals. The chip also integrates a TTL mute function that turns off the amplifiers for power critical or TDD applications. A temperature compensated detector is included for output power monitor or ALC applications. The chip has a P 1dB of +30 dBm and a third order intercept of +45 dBm.
The TRF1223 is designed to function as a part of Texas Instruments complete 3.5-GHz chip set. The TRF1223 is the output power amplifier or a driver amplifier for higher power applications. The linear nature of the transmitter makes it ideal for complex modulations schemes such as high order QAM or OFDM.
Features |
| • 1 W P-1dB Linear, 30-dB Gain Transmitter• Operates Over the 3300-MHz to 3800-MHz Range• Two TTL Controlled, 1-bit, 16-dB Gain Steps for 32 dB of Total Gain Control• Superior Linearity (+45 dBm IP3) Over the Entire Frequency Range• Auto-Bias Design With PA Enable• Temperature Compensated Directional Coupler Detector• Low Power Bias Mode• Internally Matched 50- Ω Input and Output |
| PARAMETER | TEST CONDITION | MIN | MAX | UNIT | |
| VDD | DC supply voltage | 0 | +8 | V | |
| VPOS | 0 | 5.5 | |||
| VNEG | -5.5 | 0 | |||
| IDD | Current consumption | 1300 | Ma | ||
| PIN | RF input power | 20 | dBm | ||
| TJ | Junction temperature | 175 | ° C | ||
| PD | Power dissipation | 6.5 | W | ||
| Digital input pins | -0.3 | 5.5 | |||
| jc | Thermal resistance junction to case(1) |
20 | ° C/W | ||
| Tstg | Storage temperature | -40 | 105 | ° C | |
| Top | Operating temperature | Maximum case temperature derate for PCB thermal resistance |
-40 | 85 | ° C |
| Lead temperature | 40 sec maximum | 220 | ° C | ||